Barkatullah University scientist and PhD scholars' research work is going to bring a revolution in the Information Technology (IT) sector, by increasing the storage capacity of Random Access Memory (RAM).
BU Physics Department senior Scientist Vilas Shelke and his six scholars - Shreeja Pillai, Deepika Bhuwal, Hilal Ahmed, Tausif Ahmed, Rashmi Yadav and Rama Yadav had together published the research paper on increasing the storage capacity of Random Access Memory (RAM) by using multiferroic materials.
Shelke told 'The Pioneer' that presently computers have Random Access Memory (RAM) of up to four Gigabytes (GB) per chip due to this limitation the speed of computing devices can not be increased.
"We have worked to increase the storage capacity of RAM by bringing change in the material and using mixture of material, this research has been published in the advanced materials journal and Rashmi has received State Young Scientist Award for it while, Hilal presented the research paper in the international symposium in Italy," he added.
Shelke said "I had been researching over multiferroic materials for past 20 years, the present research work started while I was working in the first Indo-US science technology programme in year 2008 at University of Alabama in US with Professor Arunava Gupta of Centre for Materials for Information Technology (MINT). We jointly sent a proposal to the renowned los Alamos National laboratory (where the first atom bomb was also made)."
"Our proposal was accepted and I was made Co-Investigator while Prof Gupta was appointed Principal Investigator of the research programme. The project was financed by Seagate limited, an international hard drive and storage manufacturers," added Shelke. He explained that memory devices are usually made of optical materials and storage is either magnetic or electrical. In which storage is provided in form of switches. The limitation of RAM is that not more than a million switches are present in a square inch space due to which the size of RAM can not be increased.
Shelke and his team has provided the alternative of this problem by using multiferroic materials in which switches are made of both electrical and magnetic which has increased the number of switches and combinations in a square inch space which has led to increasing the storage capacity of RAM by several hundred times.
The implication of this research work will provide every computer with RAM of over 100 Gigabytes (GB). Shelke said that presently computers have to storage device - RAM and ROM while after this technology is implemented only one memory device will be used.